Our wide STPOWERproduct portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime. Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management.Maximum junction temperature up to 175 ☌ The directory contains all the main categories of transistors: bipolar silicon and germanium transistors, pre-biased bipolar transistors, junction and.Best trade-off between conduction and switch-off energy losses.Our IGBTs are available in bare die as well as packaged discrete components.

Offering an optimal trade-off between switching performance and on-state behavior (variant), ST's IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers. ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1700 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying.

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